%0 Journal Article
	%A Yashvir Singh and  Swati Chamoli
	%D 2013
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 80, 2013
	%T Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET
	%U https://publications.waset.org/pdf/16955
	%V 80
	%X In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

	%P 1087 - 1090