@article{(Open Science Index):https://publications.waset.org/pdf/16955, title = {Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET}, author = {Yashvir Singh and Swati Chamoli}, country = {}, institution = {}, abstract = {In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch. }, journal = {International Journal of Electronics and Communication Engineering}, volume = {7}, number = {8}, year = {2013}, pages = {1087 - 1090}, ee = {https://publications.waset.org/pdf/16955}, url = {https://publications.waset.org/vol/80}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 80, 2013}, }