Z. X. Chen and  Z. Fang and  X. P. Wang and  G. -Q. Lo and  D. -L. Kwong and  Y. H. Wu,  Switching Behaviors of HfO2/NiSix Based RRAM.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    September 2013, vol. 81(9). 1230 - 1232
    [viewed 19 April 2024]. Available from: https://publications.waset.org/pdf/16701.