%0 Journal Article
	%A Z. X. Chen and  Z. Fang and  X. P. Wang and  G. -Q. Lo and  D. -L. Kwong and  Y. H. Wu
	%D 2013
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 81, 2013
	%T Switching Behaviors of HfO2/NiSix Based RRAM
	%U https://publications.waset.org/pdf/16701
	%V 81
	%X This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2. A 10nm HfO2 switching material and 50nm TiN top electrode was then deposited and etched into 500nm by 500nm square RRAM cells. Cell performance of the Ni2Si and NiSi cells were good, while the NiSi2 cell could not switch reliably, indicating that the presence of Ni in the bottom electrode is important for good switching.

	%P 1230 - 1232