%0 Journal Article %A Z. Fang and X. P. Wang and G. Q. Lo and D. L. Kwong %D 2013 %J International Journal of Electronics and Communication Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 81, 2013 %T Oxide Based Resistive Random Access Memory Device for High Density Non Volatile Memory Applications %U https://publications.waset.org/pdf/16700 %V 81 %X In this work, we demonstrated vertical RRAM device fabricated at the sidewall of contact hole structures for possible future 3-D stacking integrations. The fabricated devices exhibit polarity dependent bipolar resistive switching with small operation voltage of less than 1V for both set and reset process. A good retention of memory window ~50 times is maintained after 1000s voltage bias. %P 1227 - 1229