TY - JFULL AU - Shiyang Zhu and G. Q. Lo and D. L. Kwong PY - 2013/10/ TI - CMOS-Compatible Deposited Materials for Photonic Layers Integrated above Electronic Integrated Circuit T2 - International Journal of Electronics and Communication Engineering SP - 1206 EP - 1210 VL - 7 SN - 1307-6892 UR - https://publications.waset.org/pdf/16682 PU - World Academy of Science, Engineering and Technology NX - Open Science Index 81, 2013 N2 - Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed. ER -