Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30517
CMOS-Compatible Deposited Materials for Photonic Layers Integrated above Electronic Integrated Circuit

Authors: G. Q. Lo, Shiyang Zhu, D. L. Kwong


Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.

Keywords: Integration, Silicon Photonics, CMOS

Digital Object Identifier (DOI):

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 2099


[1] D. J. Lockwood and L. Pavesi, “Silicon photonics II: components and integration”, Topic in Applied Physics, vol. 119, Springer-Verlag, Berlin (2011).
[2] A. Biberman, K. Preston, G. Hendry, N. Sherwood-Droz, J. Chan, J. S. Levy, M. Lipson, and K. Bergman, “Photonic network-on-chip architectures using multiple deposited silicon materials for high performance chip multiprocessors,” ACM J. Emerging Technologies in Computing Systems, vol. 7, no. 2, art. 7 (2011).
[3] A. Gondarenko, J. S. Levy, and M. Lipson, “High confinement microscale silicon nitride high Q ring resonator,” Optics Express, vol. 17, pp. 11366-11370 (2010).
[4] F. G. D. Corte, S. Rao, G. Coppola, and C. Summonte, “Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device,” Optics Express 19(4), 2941-2951 (2011).
[5] S. Y. Zhu, G. Q. Lo, and D. L. Kwong, “Low-loss amorphous silicon wire waveguide for integrated photonics: effect of fabrication process and the thermal stability,” Optics Express 18(24), 25283-25291 (2010).
[6] S. Y. Zhu, G. Q. Lo, W. Li, and D. L. Kwong, “Effect of cladding layer and subsequent heat treatment on hydrogenated amorphous silicon waveguides,” Optics Express 20(21), 23676-23683 (2010).
[7] S. Y. Zhu, Q. Fang, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Propagation losses in undoped and n-doped polycrystalline silicon wire waveguides,” Optics Express 17(23), 20891-20899 (2009).
[8] S. Y. Zhu, G. Q. Lo, and D. L. Kwong, “Influence of RTA and LTA on the optical propagation loss in polycrystalline silicon waire waveguides,” IEEE Photonics Technology Lett., 22(2), 480-482 (2010).