%0 Journal Article
	%A B. B. Weng and  Z. Fang and  Z. X. Chen and  X. P. Wang and  G. Q. Lo and  D. L. Kwong
	%D 2013
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 81, 2013
	%T ALD HfO2 Based RRAM with Ti Capping
	%U https://publications.waset.org/pdf/16644
	%V 81
	%X HfOx based Resistive Random Access Memory (RRAM) is one of the most widely studied material stack due to its promising performances as an emerging memory technology. In this work, we systematically investigated the effect of metal capping layer by preparing sample devices with varying thickness of Ti cap and comparing their operating parameters with the help of an Agilent-B1500A analyzer.

	%P 1151 - 1152