K. Jabeur and L. D. Buda-Prejbeanu and G. Prenat and G. Di Pendina
Study of Two Writing Schemes for a Magnetic Tunnel Junction Based On Spin Orbit Torque
1054 - 1059
2013
7
8
International Journal of Electrical and Computer Engineering
https://publications.waset.org/pdf/16146
https://publications.waset.org/vol/80
World Academy of Science, Engineering and Technology
MRAM technology provides a combination of fast
access time, nonvolatility, data retention and endurance. While a
growing interest is given to twoterminal Magnetic Tunnel Junctions
(MTJ) based on SpinTransfer Torque (STT) switching as the
potential candidate for a universal memory, its reliability is
dramatically decreased because of the common writingreading path.
Threeterminal MTJ based on SpinOrbit Torque (SOT) approach
revitalizes the hope of an ideal MRAM. It can overcome the
reliability barrier encountered in current twoterminal MTJs by
separating the reading and the writing path. In this paper, we study
two possible writing schemes for the SOTMTJ device based on
recently fabricated samples. While the first is based on precessional
switching, the second requires the presence of permanent magnetic
field. Based on an accurate VerilogA model, we simulate the two
writing techniques and we highlight advantages and drawbacks of
each one. Using the second technique, pioneering logic circuits based
on the threeterminal architecture of the SOTMTJ described in this
work are under development with preliminary attractive results.
Open Science Index 80, 2013