WASET
	%0 Journal Article
	%A Yong Seo Koo and  Dong Su Kim and  Byung Seok Lee and  Won Suk Park and  Bo Bea Song
	%D 2012
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 67, 2012
	%T Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process
	%U https://publications.waset.org/pdf/15203
	%V 67
	%X This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

	%P 655 - 658