%0 Journal Article %A Yong Seo Koo and Dong Su Kim and Byung Seok Lee and Won Suk Park and Bo Bea Song %D 2012 %J International Journal of Electronics and Communication Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 67, 2012 %T Electrical Characteristics of SCR - based ESD Device for I/O and Power Rail Clamp in 0.35um Process %U https://publications.waset.org/pdf/15203 %V 67 %X This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V. %P 655 - 658