@article{(Open Science Index):https://publications.waset.org/pdf/14853, title = {Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology}, author = { Renbin Dai and Rana Arslan Ali Khan}, country = {}, institution = {}, abstract = {The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report. This power amplifier is part of a transceiver used in radar for monitoring iron characteristics in a blast furnace. The circuit was designed using foundry WIN Semiconductors. The specification requires 15dB gain in the linear region, VSWR nearly 1 at input as well as at the output, an output power of 10 dBm and good stable performance in the band 10.9-12.2 GHz. The design was implemented by using inter-stage configuration, the Class A amplifier was chosen for driver stage i.e. the first amplifier focusing on the gain and the output amplifier conducted at Class AB with more emphasis on output power.}, journal = {International Journal of Electronics and Communication Engineering}, volume = {2}, number = {3}, year = {2008}, pages = {504 - 509}, ee = {https://publications.waset.org/pdf/14853}, url = {https://publications.waset.org/vol/15}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 15, 2008}, }