{"title":"Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms","authors":"Mazhar B. Tayel, Amr H. Yassin","volume":26,"journal":"International Journal of Electrical and Computer Engineering","pagesStart":314,"pagesEnd":318,"ISSN":"1307-6892","URL":"https:\/\/publications.waset.org\/pdf\/13284","abstract":"
A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs\/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.<\/p>\r\n","references":"[1] G. Dambrine, A. Cappy, F. Heliodore and E. Playez, \"A New Method\r\nfor Determining the FET Small-Signal Equivalent Circuit\", IEEE Trans.\r\nMicrowave Theory Tech., vol. 36, pp. 1151-1159, July 1988.\r\n[2] Dambrine ,Cappy , and Danneville\", A New Extrinsic Circuit of\r\nHEMT's Including Noise for Millimeter-Wave Circuit Design\", IEEE\r\nTrans. Microwave Theory Tech., vol. 46, No 9, September 1998.\r\n[3] Chigaeva,Breitschaedel,Ambacher and Hilsenbeck ,\" Determination of\r\nSmall- Signal Parameters of GaN-based HEMTs\", Proceedings 2000\r\nIEEE, Cornell Conference of High performance Devices.\r\n[4] El-Gendy Amr, \"Modifications Of AlGaN\/GaN HEMT Performance\r\nParameters and Equivalent Circuit\", PhD Thesis, Faculty of\r\nEngineering, Alexandria University ,2006.\r\n[5] Chipperfield ,Fleming , Pohlheim and Fonseca\" Genetic Algorithm\r\nToolbox For Use with MATLAB User Guide\", version 1.2 , University\r\nof Sheffield.\r\n[6] D. E. Goldberg, Genetic algorithms in search, optimization & machine\r\nlearning, New York, Addison- Wesley Publishing Company, 1989.\r\n[7] Fitronic Solid State,\" Applications Notes Discrete FET \/ PHEMT\r\nDevices\", Revision A - August 1996.\r\n[8] GaAs MESFET Characteristics Using Least Squares Approximation by\r\nRational Functions.\" IEEE Transactions on Microwave Theory and\r\nTechniques, vol. 41, no. 2, February 1993.\r\n[9] J. W. Bandler and Q. J. Zhang, \"An Automatic Decomposition\r\nApproach to Optimization of Large Microwave Systems\", IEEE Trans.\r\nMicrowave Theory Tech., vol. 35, pp. 1231- 1239, Dec.1987.\r\n[10] Shirakawa, H. Oikawa, T. Shimura, Y. Kawasaki, Y. Ohashi, T. Saito\r\nand Y. Daido, \"An Approach to Determining An Equivalent Circuit\r\nfor HEMT's,\" IEEE Trans. Microwave Theory Tech., vol. 43, pp. 499-\r\n503, Mar. 1995.\r\n[11] A. S. Patterson, V. F. Fusco, J. J. McKeown and J. A. C. Stewart, \"A\r\nSystematic Optimization Strategy for Microwave Device Modeling\",\r\nIEEE Trans. Microwave Tech., vol. 41, pp. 395- 405,Mar. 1993.\r\n[12] M. Tim Jones, Artificial Intelligence a Systems Approach, Infinity\r\nScience Press Hingham, Massachusetts, New Delhi, 2008.","publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 26, 2009"}