%0 Journal Article
	%A Mazhar B. Tayel and  Amr H. Yassin
	%D 2009
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 26, 2009
	%T Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms
	%U https://publications.waset.org/pdf/13284
	%V 26
	%X A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.

	%P 314 - 317