@article{(Open Science Index):https://publications.waset.org/pdf/13284,
	  title     = {Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms},
	  author    = {Mazhar B. Tayel and  Amr H. Yassin},
	  country	= {},
	  institution	= {},
	  abstract     = {A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.
},
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {3},
	  number    = {2},
	  year      = {2009},
	  pages     = {314 - 317},
	  ee        = {https://publications.waset.org/pdf/13284},
	  url   	= {https://publications.waset.org/vol/26},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 26, 2009},
	}