@article{(Open Science Index):https://publications.waset.org/pdf/1308,
	  title     = {Resistive RAM Based on Hfox and its Temperature Instability Study},
	  author    = {Z. Fang and  H.Y. Yu and  W.J. Liu and  N. Singh and  G.Q. Lo},
	  country	= {},
	  institution	= {},
	  abstract     = {High performance Resistive Random Access Memory
(RRAM) based on HfOx has been prepared and its temperature
instability has been investigated in this work. With increasing
temperature, it is found that: leakage current at high resistance state
increases, which can be explained by the higher density of traps
inside dielectrics (related to trap-assistant tunneling), leading to a
smaller On/Off ratio; set and reset voltages decrease, which may be
attributed to the higher oxygen ion mobility, in addition to the
reduced potential barrier to create / recover oxygen ions (or oxygen
vacancies); temperature impact on the RRAM retention degradation
is more serious than electrical bias.},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {4},
	  number    = {12},
	  year      = {2010},
	  pages     = {1836 - 1838},
	  ee        = {https://publications.waset.org/pdf/1308},
	  url   	= {https://publications.waset.org/vol/48},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 48, 2010},
	}