@article{(Open Science Index):https://publications.waset.org/pdf/12612, title = {The Role of Ga(Gallium)-flux and AlN(Aluminum Nitride) as the Interface Materials, between (Ga-face)GaN and (Siface)4H-SiC, through Molecular Dynamics Simulation}, author = {Srikanta Bose and Sudip K. Mazumder}, country = {}, institution = {}, abstract = {We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)( 0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC hetero-epitaxial system, with one layer of (Al-face)AlN as the interface material, is comparatively higher than that of the various cases studied, indicating that there could be good vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC hetero-epitaxial material system.}, journal = {International Journal of Materials and Metallurgical Engineering}, volume = {4}, number = {10}, year = {2010}, pages = {660 - 663}, ee = {https://publications.waset.org/pdf/12612}, url = {https://publications.waset.org/vol/46}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 46, 2010}, }