%0 Journal Article %A Farid Moshgelani and Dhamin Al-Khalili and Côme Rozon %D 2013 %J International Journal of Electronics and Communication Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 76, 2013 %T Low Leakage MUX/XOR Functions Using Symmetric and Asymmetric FinFETs %U https://publications.waset.org/pdf/12242 %V 76 %X In this paper, FinFET devices are analyzed with emphasis on sub-threshold leakage current control. This is achieved through proper biasing of the back gate, and through the use of asymmetric work functions for the four terminal FinFET devices. We are also examining different configurations of multiplexers and XOR gates using transistors of symmetric and asymmetric work functions. Based on extensive characterization data for MUX circuits, our proposed configuration using symmetric devices lead to leakage current and delay improvements of 65% and 47% respectively compared to results in the literature. For XOR gates, a 90% improvement in the average leakage current is achieved by using asymmetric devices. All simulations are based on a 25nm FinFET technology using the University of Florida UFDG model. %P 354 - 359