@article{(Open Science Index):https://publications.waset.org/pdf/12010, title = {Optimization and Determination of Process Parameters in Thin Film SOI Photo-BJMOSFET}, author = {Hai-Qing Xie and Yun Zeng and Yong-Hong Yan and Guo-Liang Zhang and Tai-Hong Wang}, country = {}, institution = {}, abstract = {We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V. }, journal = {International Journal of Physical and Mathematical Sciences}, volume = {3}, number = {10}, year = {2009}, pages = {813 - 817}, ee = {https://publications.waset.org/pdf/12010}, url = {https://publications.waset.org/vol/34}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 34, 2009}, }