TY - JFULL AU - Muhibul Haque Bhuyan and Quazi Deen Mohd Khosru PY - 2010/9/ TI - Linear Pocket Profile based Threshold Voltage Model for sub-100 nm n-MOSFET T2 - International Journal of Electronics and Communication Engineering SP - 1186 EP - 1192 VL - 4 SN - 1307-6892 UR - https://publications.waset.org/pdf/11637 PU - World Academy of Science, Engineering and Technology NX - Open Science Index 44, 2010 N2 - This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices. ER -