%0 Journal Article
	%A Soo-Yeon Lee and  Seung-Min Song and  Moon-Kyu Song and  Woo-Geun Lee and  Kap-Soo Yoon and  Jang-Yeon Kwon and Min-Koo Han
	%D 2011
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 52, 2011
	%T The Light Response Characteristics of Oxide-Based Thin Film Transistors
	%U https://publications.waset.org/pdf/11559
	%V 52
	%X We fabricated the inverted-staggered etch stopper
structure oxide-based TFT and investigated the characteristics of oxide
TFT under the 400 nm wavelength light illumination. When 400 nm
light was illuminated, the threshold voltage (Vth) decreased and
subthreshold slope (SS) increased at forward sweep, while Vth and SS
were not altered when larger wavelength lights, such as 650 nm, 550
nm and 450 nm, were illuminated. At reverse sweep, the transfer curve
barely changed even under 400 nm light. Our experimental results
support that photo-induced hole carriers are captured by donor-like
interface trap and it caused the decrease of Vth and increase of SS. We
investigated the interface trap density increases proportionally to the
photo-induced hole concentration at active layer.
	%P 552 - 554