%0 Journal Article
	%A Chih Chin Yang and  Lan Hui Huang and  Bo Shum Chen and  Jia Liang Ke and  Chung Lun Tsai
	%D 2009
	%J International Journal of Chemical and Molecular Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 32, 2009
	%T Inductance Characteristic of Annealed Titanium Dioxide on Silicon Substrate
	%U https://publications.waset.org/pdf/11241
	%V 32
	%X The control of oxygen flow rate during growth of
titanium dioxide by mass flow controller in DC plasma sputtering
growth system is studied. The impedance of TiO2 films for inductance
effect is influenced by annealing time and oxygen flow rate. As
annealing time is increased, the inductance of TiO2 film is the more.
The growth condition of optimum and maximum inductance for TiO2
film to serve as sensing device are oxygen flow rate of 15 sccm and
large annealing time. The large inductance of TiO2 film will be
adopted to fabricate the biosensor to obtain the high sensitivity of
sensing in biology.
	%P 380 - 382