Variable-Relation Criterion for Analysis of the Memristor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 32797
Variable-Relation Criterion for Analysis of the Memristor

Authors: Qingjiang Li, Hui Xu, Haijun Liu, Xiaobo Tian

Abstract:

To judge whether the memristor can be interpreted as the fourth fundamental circuit element, we propose a variable-relation criterion of fundamental circuit elements. According to the criterion, we investigate the nature of three fundamental circuit elements and the memristor. From the perspective of variables relation, the memristor builds a direct relation between the voltage across it and the current through it, instead of a direct relation between the magnetic flux and the charge. Thus, it is better to characterize the memristor and the resistor as two special cases of the same fundamental circuit element, which is the memristive system in Chua-s new framework. Finally, the definition of memristor is refined according to the difference between the magnetic flux and the flux linkage.

Keywords: Memristor, Fundamental, Variable-Relation Criterion, Memristive system

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1076374

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1635

References:


[1] L. O. Chua, "Memristor-the missing circuit elemrnt," IEEE Trans. Circuit Theory, vol. CT-18, no.5, pp. 507-519, 1971.
[2] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature, vol. 453, pp. 80-83, 2008.
[3] J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices," Nature Nanotechnol., vol. 3, pp. 429-433, Jul. 2008.
[4] H. Mostafa, M. Anis, and M. Elmasry, "A design-oriented soft error rate variation model accounting for both die-to-die and within-die variations in submicrometer CMOS SRAM cells," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 6, pp. 1298-1311, Jun. 2010.
[5] Y. Ho, G. M. Huang, and P. Li, "Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 58, no. 4, pp. 724-734, April. 2011.
[6] B. Mouttet, "The mythology of the memristor," in ISCAS, 2010
[Online]. Available: http://www.slideshare.net/blaisemouttet/mythical-memristor
[7] M. D. Ventra, Y. V. Pershin and L. O. Chua, "Circuit Elements with Memory: Memristors, Memcapacitors and Meminductors," Proc. IEEE, vol.97, no. 10, pp. 1717-1724, Oct. 2009.
[8] B. Mouttet, "An introduction to Memimpedance and Memadmittance System Analysis," 2009
[Online]. Available: http://knol.google.com/k/ an-introduction-to-memadmittance-systems-analysis#
[9] M. D. Ventra, Y. V. Pershin and L. O. Chua, "Putting Memory Into Circuit Elements: Memristors, Memcapacitors and Meminductors," Proc. IEEE, vol.97, no. 10, pp. 1717-1724, Oct. 2009.
[10] L. O. Chua and S. M. Kang, "Memristive devices and systems," Proc. IEEE, vol. 64, pp. 209-223, 1976.
[11] "Memristor," Wikipedia
[Online]. Available: http://en.wikipedia.org/ Wiki/Memristor