@article{(Open Science Index):https://publications.waset.org/pdf/10922, title = {Oxygen-Interstitials and Group-V Element Doping for p-Type ZnO}, author = {A. M. Gsiea and J. P. Goss and P. R. Briddon and K. M. Etmimi}, country = {}, institution = {}, abstract = {In realizing devices using ZnO, a key challenge is the production of p-type material. Substitution of oxygen by a group-V impurity is thought to result in deep acceptor levels, but a candidate made up from a complex of a group-V impurity (P, As, Sb) on a Zn site coupled with two vacant Zn sites is widely viewed as a candidate. We show using density-functional simulations that in contrast to such a view, complexes involving oxygen interstitials are energetically more favorable, resulting in group-V impurities coordinated with four, five or six oxygen atoms.}, journal = {International Journal of Physical and Mathematical Sciences}, volume = {7}, number = {3}, year = {2013}, pages = {370 - 378}, ee = {https://publications.waset.org/pdf/10922}, url = {https://publications.waset.org/vol/75}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 75, 2013}, }