@article{(Open Science Index):https://publications.waset.org/pdf/10806, title = {Comprehensive Nonlinearity Simulation of Different Types and Modes of HEMTs with Respect to Biasing Conditions}, author = {M. M. Karkhanehchi and A. Ammani}, country = {}, institution = {}, abstract = {A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source biasing voltage within the device so as to employ the circuit for the highest possible output current or voltage linear swing. Simulation results can be used as a basis for the selection of optimum gate-source biasing voltage for a given type and mode of HEMT with regard to a circuit design. The consequences can also be a criterion for choosing the optimum type or mode of HEMT for a predetermined biasing condition.}, journal = {International Journal of Electronics and Communication Engineering}, volume = {4}, number = {8}, year = {2010}, pages = {1156 - 1161}, ee = {https://publications.waset.org/pdf/10806}, url = {https://publications.waset.org/vol/44}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 44, 2010}, }