Improvement of Photoluminescence Uniformity of Porous Silicon by using Stirring Anodization Process
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Improvement of Photoluminescence Uniformity of Porous Silicon by using Stirring Anodization Process

Authors: Jia-Chuan Lin, Meng-Kai Hsu, Hsi-Ting Hou, Sin-Hong Liu

Abstract:

The electrolyte stirring method of anodization etching process for manufacturing porous silicon (PS) is reported in this work. Two experimental setups of nature air stirring (PS-ASM) and electrolyte stirring (PS-ESM) are employed to clarify the influence of stirring mechanisms on electrochemical etching process. Compared to traditional fabrication without any stirring apparatus (PS-TM), a large plateau region of PS surface structure is obtained from samples with both stirring methods by the 3D-profiler measurement. Moreover, the light emission response is also improved by both proposed electrolyte stirring methods due to the cycling force in electrolyte could effectively enhance etch-carrier distribution while the electrochemical etching process is made. According to the analysis of statistical calculation of photoluminescence (PL) intensity, lower standard deviations are obtained from PS-samples with studied stirring methods, i.e. the uniformity of PL-intensity is effectively improved. The calculated deviations of PL-intensity are 93.2, 74.5 and 64, respectively, for PS-TM, PS-ASM and PS-ESM.

Keywords: Porous Silicon, Photoluminescence, Uniformity Carrier Stirring Method

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1075332

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References:


[1] L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett., vol. 57, pp. 1046-1048, July 1990.
[2] P. McCord, S. L. Yau and A. J. Bard, "Chemiluminescence of anodized and etched silicon: evidence for a luminescent siloxene-like layer on porous silicon," Science, vol. 257, pp. 68-69, Jul. 1992.
[3] P. Fauchet, "Photoluminescence and electroluminescence from porous silicon," J. Lumin., vol. 257, pp. 294-309, Oct. 1996.
[4] A. G. Cullis, L. T. Canham and P. D. J. Calcott, "The structural and luminescence properties of porous silicon," J. Appl. Phys., vol. 82, pp. 909-965, Apr. 1997.
[5] O. Bisi, S. Ossicine and L. Pavesi, "Porous silicon: a quantum sponge structure for silicon based optoelectronics," Surf. Sci. Rep., vol. 38, pp. 1-126, Apr. 2000.
[6] F. P. Mathew and E. C. Alocilja, "Porous silicon-based biosensor for pathogen detection," Biosens. Bioelectron., vol. 20, pp. 1656-1661, Feb. 2005.
[7] M. J. Schoning, A. Kurowski, M.Thust, P. Kordos, J. W. Schultze and H. Luth, "Capacitive microsensors for biochemical sensing based on porous silicon technology," Sensor. Actuat. B Chem., vol. 64, pp. 59-64, Jun. 2000.
[8] V. Polishchuk, E. Souteyrand, J. R. Martin, V. I. Strikha and V. A. Skrysheveky, "A study of hydrogen detection with palladium modified porous silicon," Anal. Chim. Acta., vol. 375, pp. 205-210, Nov. 1998.
[9] K. Luongo, A. Sine and S. Bhansali, "Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures," Sensor. Actuat. B Chem., vol. 111-112, pp. 125-129, Nov. 2005.
[10] C. Tsamis, A. G. Nassiopoulou and A. Tserepi, "Thermal properties of suspended porous silicon micro-hotplates for sensor applications," Sensor. Actuat. B Chem., vol. 95, pp. 78-82, Oct. 2003.
[11] P. Y. Y. Kan and T. G. Finstad, "Oxidation of macroporous silicon for thick thermal insulation," Mat. Sci. Eng. B-Adv., vol. 118, pp. 289-292, Apr. 2005.
[12] M. Bjorkqvist, J. Salonen, J. Paski, E. Laine, " Characterization of thermally carbonized porous silicon humidity sensor," Sensor. Actuat. A Phys., vol. 112, pp. 244-247, May 2004.
[13] H. Contopanagos and A. G. Nassiopoulou, "Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes," Solid State Electron., vol. 50, pp. 1283-1290, Aug. 2006.
[14] C. Li, H. Liao, L. Yang and R. Huang, "High-performance integrated inductor and effective crosstalk isolation using post-CMOS selective grown porous silicon (SGPS) technique for RFIC applications," Solid State Electron., vol. 51, pp. 989-994, Jun. 2007.
[15] L. T. Canham, W. Y. Leong, T. I. Cox and L. Taylor, "Efficient visible electroluminescence from highly porous silicon under cathodic bias," Appl. Phys. Lett., vol. 61, pp. 2563-2565, Sep. 1992.
[16] J. C. Lin, P. W. Lee and W. C. Tsai, "Manufacturing method for n-type porous silicon based on Hall effect without illumination," Appl. Phys. Lett., vol. 89, pp. 12119-1-3, Sep. 2006.
[17] A. Richter, P. Steiner, F. Kozlowski and W. Lang, "Current-induced light emission from a porous silicon device," IEEE Electron Device Lett., vol. 12, pp. 691-692, Dec. 1991.
[18] J. Sarahy, S. Shih, K. Jung, C. Tsai, K. H. Li, D. L. Kwong, J. C. Campbell, S. L. Yau and A. J. Bard, "Demonstration of photoluminescence in nonanodized silicon," Appl. Phys. Lett., vol. 60, pp. 1532-1535, Jan. 1992.
[19] A. Ksendzov, R. W. Fathauer, T. George, W. T. Pike, R. P. Vasquez, and A. P. Taylor, "Visible photoluminescence of porous Si1−xGex obtained by stain etching," Appl. Phys. Lett., vol. 63, pp. 200-202, Apr. 1993.
[20] N. V. Gaponenko, "Sol-gel derived films in meso-porous matrices: porous silicon, anodic alumina and artificial opals," Synth. Met., vol. 124, pp. 125-130, Oct. 2001.
[21] S. Kalem and O. Yavuzcetin, "Possibility of fabricating light-emitting porous silicon from gas phase etchants," Opt. Exp., vol. 6, pp. 7-11, Jan. 2000.
[22] M. Saadoun, N. Mliki, H. Kaabi, K. Daoudi, B. Bessais, H. Ezzaouia and R. Bennaceur, "Vapour-etching-based porous silicon: a new approach," Thin Solid Films, vol. 405, pp. 29-34, Feb. 2002.
[23] T. Unagami, "Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution," J. Electrochem. Soc., vol.127, pp. 476-486, Feb. 1980.
[24] J. C. Lin, W. C. Tsai and W. L. Chen, "Light emission and negative differential conductance of n-type nanoporous silicon with buried p-layer assistance," Appl. Phys. Lett., vol. 90, pp. 09117 (1-3), Mar. 2007.