TY - JFULL AU - Kyoung-il Do and Byung-seok Lee and Hee-guk Chae and Jeong-yun Seo Yong-seo Koo PY - 2018/4/ TI - A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics T2 - International Journal of Electrical and Computer Engineering SP - 243 EP - 247 VL - 12 SN - 1307-6892 UR - https://publications.waset.org/pdf/10008991 PU - World Academy of Science, Engineering and Technology NX - Open Science Index 135, 2018 N2 - In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V. ER -