@article{(Open Science Index):https://publications.waset.org/pdf/10007672,
	  title     = {Resistive Switching Characteristics of Resistive Random Access Memory Devices after Furnace Annealing Processes},
	  author    = {Chi-Yan Chu and  Kai-Chi Chuang and  Huang-Chung Cheng},
	  country	= {},
	  institution	= {},
	  abstract     = {In this study, the RRAM devices with the TiN/Ti/HfOx/TiN structure were fabricated, then the electrical characteristics of the devices without annealing and after 400 °C and 500 °C of the furnace annealing (FA) temperature processes were compared. The RRAM devices after the FA’s 400 °C showed the lower forming, set and reset voltages than the other devices without annealing. However, the RRAM devices after the FA’s 500 °C did not show any electrical characteristics because the TiN/Ti/HfOx/TiN device was oxidized, as shown in the XPS analysis. From these results, the RRAM devices after the FA’s 400 °C showed the best electrical characteristics.
},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {11},
	  number    = {8},
	  year      = {2017},
	  pages     = {947 - 950},
	  ee        = {https://publications.waset.org/pdf/10007672},
	  url   	= {https://publications.waset.org/vol/128},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 128, 2017},
	}