{"title":"Fabrication of High-Power AlGaN\/GaN Schottky Barrier Diode with Field Plate Design","authors":"Chia-Jui Yu, Chien-Ju Chen, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu","volume":128,"journal":"International Journal of Materials and Metallurgical Engineering","pagesStart":528,"pagesEnd":533,"ISSN":"1307-6892","URL":"https:\/\/publications.waset.org\/pdf\/10007572","abstract":"
In this letter, we demonstrate high-performance AlGaN\/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage V<\/em>B<\/sub>. A low turn-on resistance RON<\/sub> (3.55 mΩ-cm2<\/sup>), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage V<\/em>B<\/sub> (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA\/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA\/mm) of 1525 V (the anode–cathode distance was LAC<\/sub> = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of V<\/em>B<\/sub>2<\/sup>\/ RON<\/sub> = 60.2 MW\/cm2<\/sup>, whereas devices with the field plate design show a Baliga’s figure of merit of V<\/em>B<\/sub>2<\/sup>\/ RON<\/sub> = 340.9 MW\/cm2<\/sup> (the anode–cathode distance was LAC<\/sub> = 20 µm).<\/p>\r\n","references":"[1]\tE. B. Treidel, O. Hilt, R. Zhytnytska, A. Wentzel, C. Meliani, J. W\u00fcrfl, and G. Tr\u00e4nkle, \u201cFast-switching GaN-based lateral power Schottky barrier diodes with low onset voltage and strong reverse blocking,\u201d IEEE Electron Device Lett, vol., 33, no. 3, Mar. 2012.\r\n[2]\tT. F. Chang, C. F. Huang, T. Y. Yang, C. W. Chiu, T. Y. Huang, K. Y. Lee, and F. Zhao, \u201cLow turn-on voltage dual metal AlGaN\/GaN Schottky barrier diode,\u201d Solid-State Electronics, vol. 105, pp. 12-15, Mar. 2015.\r\n[3]\tJ. Hu, S. Stoffels, S. Lenci, N. Ronchi, R. Venegas, S. You, B. Bakeroot, G. Groeseneken, \u201cPhysical origin of current collapse in Au-free AlGaN\/GaN Schottky barrier diodes,\u201d Microelectronics Reliability, vol. 54, pp. 2196\u20132199, 2014.\r\n[4]\tY. Yao, J. Zhong, Y. Zheng, F. Yang, Y. Ni, Z. He, Z. Shen, G. Zhou, S. Wang, J. Zhang, J. Li, D. Zhou, Z. Wu, B. Zhang, and Y. Liu, \u201cCurrent transport mechanism of AlGaN\/GaN Schottky barrier diode with fully recessed Schottky anode,\u201d Japanese Journal of Applied Physics, vol. 54, pp. 011001, 2015.\r\n[5]\tM. W. Ha, M. K. Han, C. K. Hahn, \u201cEffects of post-oxidation on leakage current of high-voltage AlGaN\/GaN Schottky barrier diodes on Si(111) substrates,\u201d Solid-State Electronics, vol. 81, pp. 1\u20134, 2013.\r\n[6]\tA. Minko, V. Ho\u00ebl, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, C. Gaqui\u00e8re, D. Th\u00e9ron, J. C. De Jaeger, H. Lahreche, L. Wedzikowski, R. Langer, and P. Bove, \u201cAlGaN\u2013GaN HEMTs on Si with power density performance of 1.9 W\/mm at 10 GHz,\u201d IEEE Electron Devices Lett., vol. 25, no. 7, pp. 453\u2013455, Jul. 2004.\r\n[7]\tI. Hwang, H. Choi, J. Lee, H. S. Choi, J. Kim, J. Ha, C. Y. Um, S. K. Hwang, J. Oh, J. Y. Kim, J. K. Shin, Y. Park, U. Chung, I. K. Yoo, and K. Kim, \u201c1.6kV, 2.9 m\u03a9 cm2 normally-off p-GaN HEMT device,\u201d IEEE International Symposium on Power Semiconductor Devices and ICs Conf., June. 2012.\r\n[8]\tJ. J. Freedsman, T. Kubo, and T. Egawa, \u201cHigh drain current density E-Mode Al2O3\/AlGaN\/GaN MOS-HEMT on Si with enhanced power device figure-of-merit (4\u00d7108 V2\u03a9-1cm-2),\u201d IEEE Transactions On Electron Devices, vol. 60, no. 10, pp. 3079\u20133083, Oct. 2013.\r\n[9]\tQ. Zhou, B. Chen, Y. Jin, S. Huang, K. Wei, X. Liu, X. Bao, J. Mou, and B. Zhang, \u201cHigh-performance enhancement-mode Al2O3\/ AlGaN\/ GaN-on-Si MISFETs with 626 MW\/cm2 figure of merit,\u201d IEEE Transactions On Electron Devices, vol. 62, no. 3, pp. 776-781, Mar. 2015.\r\n[10]\tS. Majumdar, A. Bag, and D. Biswas, \u201cImplementation of veriloga GaN HEMT model to design RF switch,\u201d Microwave And Optical Technology Lett., vol. 57, no. 7, pp. 1765-1768, Jul. 2015.\r\n[11]\tK. Park, Y. Park, S. Hwang, and W. Jeon, \u201c1kV AlGaN\/GaN power SBDs with reduced on resistances,\u201d International Symposium on Power Semiconductor Devices & IC's, pp. 223-226, 2011.\r\n[12]\tJ. G. Lee, B. R. Park, C. H. Cho, K. S. Seo, and H. Y. Cha, \u201cLow turn-nn voltage AlGaN\/GaN-on-Si rectifier with gated ohmic anode,\u201d IEEE Electron Device Lett., vol. 34, no. 2, pp. 241-216, Feb. 2013.\r\n[13]\tY. W. Lian, Y. S. Lin, J. M. Yang, C. H. Cheng, and S. S. H. Hsu, \u201cAlGaN\/GaN Schottky barrier diodes on silicon substrates with selective Si diffusion for low onset voltage and high reverse blocking,\u201d IEEE Electron Device Lett., vol. 34, no. 8, pp. 981-983, Aug. 2013.\r\n[14]\tM. Zhu, B. Song, M. Qi, Z. Hu, K. Nomoto, X. Yan, Y. Cao, W. Johnson, E. Kohn, D. Jena, H. G. Xing, \u201c1.9-kV AlGaN\/GaN lateral Schottky barrier diodes on silicon,\u201d IEEE Electron Device Lett., vol. 36, no. 4, pp. 375-377, Apr. 2015.\r\n[15]\tS. C. Lee, M. W. Ha, J. C. Her, S. S. Kim, J. Y. Lim, K. S. Seo, and M. K. Han, \u201cHigh breakdown voltage GaN Schottky barrier diode employing floating metal rings on AlGaN\/GaN hetero-junction,\u201d International Symposium on Power Semiconductor Devices & IC's, pp. 247-250, 2005.\r\n[16]\tG. Y. Lee, H. H. Liu, and J. I. Chyi, \u201cHigh-performance AlGaN\/GaN Schottky diodes with an AlGaN\/AlN buffer layer,\u201d IEEE Electron Device Lett., vol. 32, no. 11, pp. 1519-1521, Nov. 2011.\r\n[17]\tO. Seok, M. K. Han, Y. C. Byun, J. Kim, H. C. Shin, M. W. Ha, \u201cHigh-voltage AlGaN\/GaN Schottky barrier diodes on silicon using a post-process O2 treatment,\u201d Solid-State Electronics, vol. 103, pp. 49\u201353, 2015.\r\n[18]\tC. W. Tsou, K. P. Wei, Y. W. Lian, and S. H. Hsu, \u201c2.07-kV AlGaN\/GaN Schottky barrier diodes on silicon with high Baliga\u2019s figure-of-merit,\u201d IEEE Electron Device Lett., vol. 37, no. 1, pp. 70-73, Jan. 2016.\r\n[19]\tL. Wang, D. H. Kim, and I. Adesida, \u201cDirect contact mechanism of Ohmic metallization to AlGaN\/GaN heterostructures via Ohmic area recess etching,\u201d Appl. Phys. Lett., vol. 95, pp. 172107, Oct. 2009.","publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 128, 2017"}