WASET
	@article{(Open Science Index):https://publications.waset.org/pdf/10007572,
	  title     = {Fabrication of High-Power AlGaN/GaN Schottky Barrier Diode with Field Plate Design},
	  author    = {Chia-Jui Yu and  Chien-Ju Chen and  Jyun-Hao Liao and  Chia-Ching Wu and  Meng-Chyi Wu},
	  country	= {},
	  institution	= {},
	  abstract     = {In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).
},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {11},
	  number    = {8},
	  year      = {2017},
	  pages     = {528 - 532},
	  ee        = {https://publications.waset.org/pdf/10007572},
	  url   	= {https://publications.waset.org/vol/128},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 128, 2017},
	}