WASET
	@article{(Open Science Index):https://publications.waset.org/pdf/10006366,
	  title     = {Gate Voltage Controlled Humidity Sensing Using MOSFET of VO2 Particles},
	  author    = {A. A. Akande and  B. P. Dhonge and  B. W. Mwakikunga and  A. G. J. Machatine},
	  country	= {},
	  institution	= {},
	  abstract     = {This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH4VO3 precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO2 (B) with V2O5 and an amorphous phase. The BET surface area is found to be 67.67 m2/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO2 sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO2 sensors which normally show response and recovery times of the order of 5 minutes (300 s).
},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {11},
	  number    = {1},
	  year      = {2017},
	  pages     = {78 - 81},
	  ee        = {https://publications.waset.org/pdf/10006366},
	  url   	= {https://publications.waset.org/vol/121},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 121, 2017},
	}