@article{(Open Science Index):https://publications.waset.org/pdf/10006167, title = {Development of Single Layer of WO3 on Large Spatial Resolution by Atomic Layer Deposition Technique}, author = {S. Zhuiykov and Zh. Hai and H. Xu and C. Xue}, country = {}, institution = {}, abstract = {Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tungsten trioxide (WO3) when the reduction from multi-layer to one fundamental layer thickness takes place. This transition without damaging single-layer on a large spatial resolution remained elusive until the atomic layer deposition (ALD) technique was utilized. Here we report the ALD-enabled atomic-layer-precision development of a single layer WO3 with thickness of 0.77±0.07 nm on a large spatial resolution by using (tBuN)2W(NMe2)2 as tungsten precursor and H2O as oxygen precursor, without affecting the underlying SiO2/Si substrate. Versatility of ALD is in tuning recipe in order to achieve the complete WO3 with desired number of WO3 layers including monolayer. Governed by self-limiting surface reactions, the ALD-enabled approach is versatile, scalable and applicable for a broader range of 2D semiconductors and various device applications.}, journal = {International Journal of Materials and Metallurgical Engineering}, volume = {11}, number = {1}, year = {2017}, pages = {46 - 49}, ee = {https://publications.waset.org/pdf/10006167}, url = {https://publications.waset.org/vol/121}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 121, 2017}, }