@article{(Open Science Index):https://publications.waset.org/pdf/10005226,
	  title     = {Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit},
	  author    = {Ahmed Shariful Alam and  Abu Hena M. Mustafa Kamal and  M. Abdul Rahman and  M. Nasmus Sakib Khan Shabbir and  Atiqul Islam},
	  country	= {},
	  institution	= {},
	  abstract     = {According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.
},
	    journal   = {International Journal of Nuclear and Quantum Engineering},
	  volume    = {9},
	  number    = {3},
	  year      = {2015},
	  pages     = {405 - 410},
	  ee        = {https://publications.waset.org/pdf/10005226},
	  url   	= {https://publications.waset.org/vol/99},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 99, 2015},
	}