WASET
    Anwar H. Jarndal and  Ahmed S. Elwakil,  Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    May 2016, vol. 115(7). 853 - 857
    [viewed 25 April 2024]. Available from: https://publications.waset.org/pdf/10004797.