Anwar H. Jarndal and Ahmed S. Elwakil, Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications. journal = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology. May 2016, vol. 115(7). 853 - 857 [viewed 25 April 2024]. Available from: https://publications.waset.org/pdf/10004797.