@article{(Open Science Index):https://publications.waset.org/pdf/10004797, title = {Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications}, author = {Anwar H. Jarndal and Ahmed S. Elwakil}, country = {}, institution = {}, abstract = {In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.}, journal = {International Journal of Electronics and Communication Engineering}, volume = {10}, number = {7}, year = {2016}, pages = {853 - 857}, ee = {https://publications.waset.org/pdf/10004797}, url = {https://publications.waset.org/vol/115}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 115, 2016}, }