%0 Journal Article %A A. Douara and N. Kermas and B. Djellouli %D 2016 %J International Journal of Nuclear and Quantum Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 111, 2016 %T Capacitance Models of AlGaN/GaN High Electron Mobility Transistors %U https://publications.waset.org/pdf/10004147 %V 111 %X In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node. %P 420 - 423