WASET
	%0 Journal Article
	%A A. Douara and  N. Kermas and  B. Djellouli
	%D 2016
	%J International Journal of Nuclear and Quantum Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 111, 2016
	%T Capacitance Models of AlGaN/GaN High Electron Mobility Transistors
	%U https://publications.waset.org/pdf/10004147
	%V 111
	%X In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

	%P 420 - 423