@article{(Open Science Index):https://publications.waset.org/pdf/10004147, title = {Capacitance Models of AlGaN/GaN High Electron Mobility Transistors}, author = {A. Douara and N. Kermas and B. Djellouli}, country = {}, institution = {}, abstract = {In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node. }, journal = {International Journal of Nuclear and Quantum Engineering}, volume = {10}, number = {3}, year = {2016}, pages = {420 - 423}, ee = {https://publications.waset.org/pdf/10004147}, url = {https://publications.waset.org/vol/111}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 111, 2016}, }