%0 Journal Article
	%A A. U. Moreh and  M. Momoh and  H. N. Yahya and  B. Hamza and  I. G. Saidu and  S. Abdullahi
	%D 2014
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 91, 2014
	%T Effect of Thickness on Structural and Electrical Properties of CuAlS2 Thin Films Grown by Two Stage Vacuum Thermal Evaporation Technique
	%U https://publications.waset.org/pdf/10003559
	%V 91
	%X This work studies the effect of thickness on structural
and electrical properties of CuAlS2 thin films grown by two stage
vacuum thermal evaporation technique. CuAlS2 thin films of
thicknesses 50nm, 100nm and 200nm were deposited on suitably
cleaned corning 7059 glass substrate at room temperature (RT). In
the first stage Cu-Al precursors were grown at room temperature by
thermal evaporation and in the second stage Cu-Al precursors were
converted to CuAlS2 thin films by sulfurisation under sulfur
atmosphere at the temperature of 673K. The structural properties of
the films were examined by X-ray diffraction (XRD) technique while
electrical properties of the specimens were studied using four point
probe method. The XRD studies revealed that the films are of
crystalline in nature having tetragonal structure. The variations of the
micro-structural parameters, such as crystallite size (D), dislocation
density ( ), and micro-strain ( ), with film thickness were
investigated. The results showed that the crystallite sizes increase as
the thickness of the film increases. The dislocation density and
micro-strain decreases as the thickness increases. The resistivity (  )
of CuAlS2 film is found to decrease with increase in film thickness,
which is related to the increase of carrier concentration with film
thickness. Thus thicker films exhibit the lowest resistivity and high
carrier concentration, implying these are the most conductive films.
Low electrical resistivity and high carrier concentration are widely
used as the essential components in various optoelectronic devices
such as light-emitting diode and photovoltaic cells.
	%P 1084 - 1088