%0 Journal Article
	%A T. S. Iwayama and  T. Hama
	%D 2015
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 104, 2015
	%T Luminescent Si Nanocrystals Synthesized by Si Ion Implantation and Reactive Pulsed Laser Deposition: The Effects of RTA, Excimer-UV and E-Beam Irradiation
	%U https://publications.waset.org/pdf/10001951
	%V 104
	%X Si ion implantation was widely used to synthesize
specimens of SiO2 containing supersaturated Si and subsequent high
temperature annealing induces the formation of embedded
luminescent Si nanocrystals. In this work, the potentialities of excimer
UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing
(RTA) to enhance the photoluminescence and to achieve low
temperature formation of Si nanocrystals have been investigated. The
Si ions were introduced at acceleration energy of 180 keV to fluence of
7.5 x 1016 ions/cm2. The implanted samples were subsequently
irradiated with an excimer-UV lamp. After the process, the samples
were rapidly thermal annealed before furnace annealing (FA).
Photoluminescence spectra were measured at various stages at the
process. We found that the luminescence intensity is strongly
enhanced with excimer-UV irradiation and RTA. Moreover, effective
visible photoluminescence is found to be observed even after FA at
900 oC, only for specimens treated with excimer-UV lamp and RTA.
We also prepared specimens of Si nanocrystals embedded in a SiO2 by
reactive pulsed laser deposition (PLD) in an oxygen atmosphere. We
will make clear the similarities and differences with the way of
preparation.
	%P 468 - 471