%0 Journal Article %A Su Jeong Lee and Tae Il Lee and Jung Han Kim and Chul-Hong Kim and Gee Sung Chae and Jae-Min Myoung %D 2015 %J International Journal of Materials and Metallurgical Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 97, 2015 %T Transparent and Solution Processable Low Contact Resistance SWCNT/AZONP Bilayer Electrodes for Sol-Gel Metal Oxide Thin Film Transistor %U https://publications.waset.org/pdf/10000425 %V 97 %X The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V·s at 250°C. %P 118 - 121